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參數(shù)資料
| 型號(hào)： | 2SC4885 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD |
| 中文描述： | NPN硅外延晶體管3引腳超小型模具 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 82K |
| 代理商： | 2SC4885 |
DATA SHEET
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan
1993
FEATURES
Excellent Low NF in Low Frequency Band
Low Voltage Use
Low C
ob
: 0.9 pF TYP.
Low Noise Voltage : 90 mV TYP.
Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
13
3.0
50
120
125
V
V
V
mA
mW
C
C
55 to +125
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 2 V, I
C
= 0
Collector to Base Saturation Voltage
V
CE (sat)
0.3
V
h
FE
= 10, I
C
= 5 mA
DC Current Gain
h
FE
60
150
V
CE
= 5 V, I
C
= 5 mA
*1
Gain Bandwidth Product
f
T
2.5
3.5
GHz
V
CE
= 5 V, I
C
= 5 mA
Collecter Capacitance
C
ob
0.8
1.2
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
S
21e
2
7.0
9.0
dB
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
Noise Figure
NF
3.0
dB
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
Noise Voltage
NV
90
200
mV
See Test Cirucit
*1
Pulse Measurement PW 350 s, Duty Cycle 2 %
h
FE
Classification
Rank
R13
Marking
R13
h
FE
60 to 150
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.1±0.1
2
0
0
0
0
0
0
+
0
0
+
0
0
+
0
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