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參數(shù)資料
| 型號： | 2SC4815 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SC4815 |
Data Sheet D15605EJ3V0DS
2
2SC4815
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 5.0 A, I
B
= 0.5 A, L = 1 mH
60
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 2.5 A, I
B1
=
I
B2
= 0.25 A
V
BE(OFF)
=
1.5 V, L = 180
μ
H, Clamped
60
V
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
= 7.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 0.5 A
100
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 1.0 A
100
200
400
DC current gain
h
FE3
*
V
CE
= 2.0 V, I
C
= 3.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
= 3.0 A, I
B
= 0.15 A
0.15
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
= 4.0 A, I
B
= 0.2 A
0.3
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
= 3.0 A, I
B
= 0.15 A
0.9
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
= 4.0 A, I
B
= 0.2 A
1.2
1.5
V
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0 , f = 1.0 MHz
70
pF
Gain bandwidth product
f
T
V
CE
= 10 V, I
C
= 0.5 A
150
MHz
Turn-on time
t
on
0.1
μ
s
Storage time
t
stg
1.0
μ
s
Fall time
t
f
I
C
= 3.0 A, R
L
= 17
,
I
B1
=
I
B2
= 0.15 A, V
CC
50 V
Refer to the test circuit.
0.25
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
or less
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| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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