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參數(shù)資料
| 型號： | 2SC4813 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延的高晶體管高速開關 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2SC4813 |
Data Sheet D15603EJ2V0DS
2
2SC4813
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0
17
mA
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 3.0 A
450
2,000
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 5.0 A
150
Collector saturation voltage
V
CE(sat)1
*
I
C
= 3.0 A, I
B
= 60 mA
0.1
0.2
V
Collector saturation voltage
V
CE(sat)2
*
I
C
= 3.0 A, I
B
= 30 mA
0.15
0.3
V
Collector saturation voltage
V
CE(sat)3
*
I
C
= 5.0 A, I
B
= 100 mA
0.4
V
Collector saturation voltage
V
CE(sat)4
*
I
C
= 5.0 A, I
B
= 50 mA
0.55
V
Base saturation voltage
V
BE(sat)
*
I
C
= 5.0 A, I
B
= 50 mA
1.2
V
Gain bandwidth product
f
T
V
CE
= 5.0 V, I
C
= 1.0 A
150
MHz
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0 , f = 1 MHz
110
pF
Turn-on time
t
on
0.5
μ
s
Storage time
t
stg
2.0
μ
s
Fall time
t
f
I
C
= 5.0 A, I
B1
=
I
B2
= 100 mA
R
L
= 3.0
, V
CC
16 V
0.5
μ
s
Diode order voltage
V
DF
I
DF
= 5.0 A
1.4
V
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base 2. Collector 3. Emitter
EQUIVALENT CIRCUIT
0.7 MAX.
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