- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33407 > 2SC4809G (PANASONIC CORP) HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC4809G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | 2SC4809G |
Transistors
1
Publication date: May 2007
SJC00396AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4809G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 010
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 01
A
Forward current transfer ratio
hFE
VCE
= 4 V, I
C
= 5 mA
75
400
hFE ratio *
h
FE
hFE2: VCE = 4 V, IC = 100 A
0.75
1.6
hFE1: VCE = 4 V, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
IC
= 20 mA, I
B
= 4 mA
0.5
V
Transition frequency
fT
VCB = 4 V, IE = 5 mA, f = 200 MHz
1.4
1.9
2.7
GHz
Collector output capacitance
Cob
VCB = 4 V, IE = 0, f = 1 MHz
1.4
pF
(Common base, input open circuited)
Reverse transfer capacitance
Crb
VCB = 4 V, IE = 0, f = 1 MHz
0.45
pF
(Common emitter)
Collector-base parameter
rbb' CC
VCB = 4 V, IE = 5 mA, f = 31.9 MHz
11
ps
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * :
h
FE
= h
FE2 / hFE1
■ Package
Code
SSMini3-F3
Marking Symbol: 1S
Pin Name
1. Base
2. Emitter
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4814-AZ | 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4814-AZ | 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4829-C | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4829BTZ | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC4829CTZ | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4809J0L | 功能描述:TRANS NPN 10VCEO 50MA SSMINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。