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參數(shù)資料
| 型號： | 2SC4783 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC4783 |
Data Sheet D15616EJ1V0DS
2
2SC4783
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
0
0.5
1.0
1.5
2.0
100
80
60
40
20
0.2
0.3
0.4
0.5
0.6
0.8
0.7
0.9
I
B
= 0.1 mA
V
CE
- Collector to Emitter Voltage - V
I
C
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
5
2
1
10
100
20
50
1
0.2
0.5
0.1
0.05
0.02
0.01
I
C
= 10 I
B
.
I
C
- Collector Current - mA
V
B
V
C
V
CE(sat)
V
BE(sat)
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
5
2
1
10
100
20
50
10
2
5
1
0.5
0.2
0.1
f = 1.0 MHz
V
CB
- Collector to Base Voltage - V
C
o
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
I
C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
10
30
1
3
0.1
0.3
0.01
0.03
T
A
5C
2
–5C
V
CE
= 6.0 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
20
10
30
40
50
10
8
6
4
2
0
I
B
= 5.0
μ
A
45
40
35
30
25
20
15
10
V
CE
- Collector to Emitter Voltage - V
I
C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature -
C
P
T
0
100
125
75
25
150
200
300
Free air
250
150
50
50
100
Whenmounedonceamcsubsraeo 30cmx064mm
2
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| 2SC4791 | Silicon NPN Epitaxial |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4783-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,50V,0.1A,USM3 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 0.1A 3-Pin SC-75 T/R |
| 2SC4783-T1-A(L6) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4783-T1-A-L7 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4784YA(TL) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4784YA-TR-E | 制造商:Renesas Electronics Corporation 功能描述: |
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