參數資料
型號: 2SC4774
廠商: Rohm CO.,LTD.
英文描述: High frequency amplifier transistor RF switching (6V, 50mA)
中文描述: 高頻射頻開關(6V的,50mA的放大器晶體管)
文件頁數: 2/3頁
文件大小: 70K
代理商: 2SC4774
2SC4774 / 2SC4713K
Transistors
z
Electrical characteristic curves
Rev.A
2/2
1
0
2
3
4
5
0
10
8
6
4
2
5mA
35mA
30mA
25mA
20mA
15mA
10mA
I
B
=
0
μ
A
Ta
=
25
°
C
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter output
characteristics ( )
0.1
0
0.2
0.3
0.4
0.5
0
50
40
30
20
10
0.3mA
04mA
05mA
1m
0.2mA
0.1mA
I
B
=
0mA
Ta
=
25
°
C
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2
Grounded emitter output
characteristics ( )
0.4
0
0.8
1.2
1.6
2.0
0
50
40
30
20
10
1
°
C
2
°
C
2
°
C
V
CE
=
5V
C
C
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3
Grounded emitter propagation
characteristics
50
0.1
20
0.2
10
0.5
5
1
2
20
10
5
50
100
200
500
1000
C
C
(
COLLECTOR CURRENT : I
C
(mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
Ta
=
25
°
C
I
C
/I
B
=
10
50
0.1
20
0.2
10
0.5
5
1
2
50
20
100
200
500
1000
2000
G
T
(
COLLECTOR CURRENT : I
C
(mA)
Fig.6
Gain bandwidth product vs.
collector current
Ta
=
25
°
C
V
CE
=
5V
50
0.1
20
0.2
10
0.5
5
1
2
20
10
50
100
200
500
1000
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.4
DC current gain vs. collector current
Ta
=
25
°
C
V
CE
=
5V
50
0.1
20
0.2
10
0.5
5
1
2
1
2
5
10
20
50
O
o
(
)
BASS CURRENT : I
B
(mA)
Fig.9
Output-on resistance vs.
base current
Ta
=
25
°
C
f
=
500kHz
υ
i
=
100mVrms
R
L
=
1k
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
20
F
r
(
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7
Collector output capacitance
vs. voltage
Ta
=
25
°
C
f
=
1MHz
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
20
O
o
(
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.8 Back capacitance voltage
Ta
=
25
°
C
f
=
1MHz
相關PDF資料
PDF描述
2SC4807 Silicon NPN Epitaxial
2SC4829 Silicon NPN Epitaxial
2SC4883 Silicon NPN Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation)
2SC4883 Shrink Tubing; Tubing Size Diameter:0.188"; Wall Thickness Recovered Nominal:0.043"; Inner Diameter Max Recovered:0.060"; Expanded Inner Diameter:0.187"; Material:Polyolefin
2SC4883A Silicon NPN Epitaxial Planar Transistor
相關代理商/技術參數
參數描述
2SC4774 T106S 制造商:ROHM Semiconductor 功能描述:
2SC4774T106 制造商:ROHM Semiconductor 功能描述:
2SC4774T106R 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SC4774T106R
2SC4774T106S 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4779S 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SPT50V .1A .3W ECB