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參數(shù)資料
| 型號： | 2SC4755R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 173K |
| 代理商： | 2SC4755R |
1
Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
s Features
q
High-speed switching.
q
Low collector to emitter saturation voltage VCE(sat).
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–70
3:Collector
S–Mini Type Package
2.1
±0.1
1.3
±0.1
0.9
±0.1
0.7
±0.1
0.3
+0.1
–0
0.15
+0.1
–0.05
2.0
±0.2
1.25
±0.1
0.425
1
3
2
0.65
0.2
0.65
0
to
0.1 0.2
±0.1
Symbol
VCBO
VCES
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
5
300
200
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
ICBO
IEBO
hFE
*
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
tstg
Conditions
VCB = 10V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
Refer to the measurment circuit
min
40
200
typ
0.17
0.76
500
2
17
15
7
max
0.1
200
0.25
1.0
4
Unit
A
V
MHz
pF
ns
Marking symbol :
DV
*h
FE Rank classification
Rank
P
Q
R
hFE
40 ~ 80
60 ~ 120
90 ~ 200
Marking Symbol
DVP
DVQ
DVR
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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