參數(shù)資料
型號(hào): 2SC458LG
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 41K
代理商: 2SC458LG
2SC458 (LG), 2SC2310
3
Electrical Characteristics
(Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
55
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
50
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
0.5
0.5
μ
A
μ
A
V
CB
=18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
0.5
0.5
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
100
500
100
320
V
CE(sat)
0.2
0.2
V
Base to emitter voltage
V
BE
0.67
0.75
0.67
0.75
V
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
V
= 10 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product f
T
Collector output
capacitance
230
230
MHz
Cob
1.8
3.5
1.8
3.5
pF
Noise figure
NF
3
5
3
5
dB
V
= 6 V, I
= 0.1 mA,
f = 120 Hz, R
g
= 500
V
= 5V, I
C
= 0.1mA,
f = 270 Hz
Small signal input
impedance
h
ie
16.5
16.5
k
Small signal voltage
feedback ratio
h
re
70
70
×
10
–6
Small signal current
transfer ratio
h
fe
130
130
Small signal output
admittance
Note:
1. The 2SC458 (LG) and 2SC2310 are grouped by h
FE
as follows.
B
C
h
oe
11.0
11.0
μ
S
D
2SC458 (LG) 100 to 200
160 to 320
250 to 500
2SC2310
100 to 200
160 to 320
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