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參數(shù)資料
| 型號： | 2SC458K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 47K |
| 代理商： | 2SC458K |
2SC458 (K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
30
V
Collector to emitter voltage
30
V
Emitter to base voltage
5
V
Collector current
100
mA
Emitter current
–100
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
0.5
μ
A
μ
A
V
CB
= 18 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 1 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
—
—
1.0
DC current transfer ratio
100
—
500
Collector to emitter saturation
voltage
—
—
0.4
V
Base to emitter voltage
V
BE(sat)
f
T
Cob
—
—
1.0
V
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 10 I
= –10 I
B2
= 10 mA,
V
CC
= 10 V
Gain bandwidth product
100
—
—
MHz
Collector output capacitance
—
—
4
pF
Turn on time
t
on
—
80
—
ns
Turn off time
t
off
t
stg
—
300
—
Storage time
—
260
—
ns
I
C
= I
= –I
B2
= 20 mA,
V
CC
= 5 V
Note:
B
1. The 2SC458 (K) is grouped by h
FE
as follows.
C
D
100 to 200
160 to 320
250 to 500
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