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參數(shù)資料
| 型號： | 2SC4529 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial VHF Wide Brand Amplifier |
| 中文描述： | npn型硅外延甚廣品牌放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 280K |
| 代理商： | 2SC4529 |
Absolute Maximum Ratings
(Ta = 25°C)
Item
————————————————————–
Collector to base voltage
————————————————————–
Collector to emitter voltage
————————————————————–
Emitter to base voltage
————————————————————–
Collector current
————————————————————–
Collector peak current
————————————————————–
Collector power dissipation
Symbol Rating Unit
V
CBO
30
V
V
CEO
20
V
V
EBO
3
V
I
C
300
mA
i
C(peak)
500
mA
P
C
——–———–
P
C*1
1
W
5
————————————————————–
Junction temperature
————————————————————–
Storage temperature
Tj
150
°C
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
123
TO-126 MOD
1. Emitter
2. Collector
3. Base
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to base breakdown voltage
V
(BR)CBO
30
———————————————————————————————————————————
Collector to emitter breakdown voltage
V
(BR)CEO
20
———————————————————————————————————————————
Collector cutoff current
I
CBO
—
———————————————————————————————————————————
Emitter cutoff Current
I
EBO
—
———————————————————————————————————————————
DC current transfer ratio
h
FE
50
———————————————————————————————————————————
Collector to emitter saturation voltage
V
CE(sat)
—
———————————————————————————————————————————
Gain bandwidth product
f
T
1.5
———————————————————————————————————————————
Collector output capacitance
Cob
—
———————————————————————————————————————————
Symbol
Min
Typ
Max
Unit
Test condition
—
—
V
I
C
= 100 μA, I
E
= 0
—
—
V
I
C
= 1 mA, R
BE
=
∞
—
1.0
μA
V
CB
= 25 V, I
E
= 0
—
10
μA
V
EB
= 3 V, I
C
= 0
—
200
V
CE
= 5 V, I
C
= 50 mA
—
1.0
V
I
C
= 100 mA, I
B
= 10 mA
2.2
—
GHz
V
CE
= 5 V, I
C
= 50 mA
4.7
—
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2SC4529
Silicon NPN Epitaxial
VHF Wide Band Amplifier
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