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參數(shù)資料
| 型號： | 2SC4308 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar |
| 中文描述： | 硅瑞展 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 30K |
| 代理商： | 2SC4308 |
2SC4308
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C (peak)
P
C
Tj
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
3
V
Collector current
300
mA
Collector peak current
500
mA
Collector power dissipation
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 100
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
f
T
Cob
—
—
1
μ
A
μ
A
V
CB
= 25 V, I
E
= 0
V
EB
= 3 V, I
E
= 0
V
CE
= 5 V, I
C
= 50 mA
V
CE
= 5 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Emitter cutoff current
—
—
10
DC current transfer ratio
50
—
200
Gain bandwidth product
1.5
2.5
—
GHz
Collector output capacitance
—
4.0
—
pF
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