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參數(shù)資料
| 型號(hào)： | 2SC4260 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 24K |
| 代理商： | 2SC4260 |
2SC4260
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
25
V
Collector to emitter voltage
13
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CE(sat)
—
—
0.1
μ
A
μ
A
μ
A
V
CB
= 15 V, I
E
= 0
V
CE
= 13 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
I
C
= 20 mA, I
B
= 4 mA
—
—
10
Emitter cutoff current
—
—
0.3
Collector to emitter saturation
voltage
—
—
0.3
V
DC current transfer ratio
h
FE
Cob
50
—
180
V
CE
= 5 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1MHz
V
CE
= 5 V, I
C
= 5 mA
V
= 5 V, I
= 0.8 mA,
f = 900 MHz
Collector output capacitance
—
0.85
1.3
pF
Gain bandwidth product
f
T
CG
3.0
3.8
—
GHz
Conversion gain
—
19
—
dB
Noise figure
NF
—
8
—
dB
f
OSC
= 930 MHz (–5dBm),
f
out
= 30 MHz
Note:
Marking is “TI–”.
See characteristic curves of 2SC4197.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4260TI-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4261 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
| 2SC4261QI-TR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4262 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN RF Transistor |
| 2SC4262IP-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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