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參數(shù)資料
| 型號(hào)： | 2SC4187 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管超小型模具 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SC4187 |
2SC4187
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
10
8
6
4
2
1
0.1
1
10
I
C
– Collector Current – mA
V
CE
= 1 V
f
T
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5
0
0.1
1
10
f – Frequency – GHz
V
CE
= 1 V
I
C
= 1 mA
|
2
|
2
INSERTION POWER GAIN vs. FREQUENCY
40
20
0
0.1
1.0
10
M
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 1 mA
MAXIMUM AVAILABLE GAIN AND INSERTION
POWER GAIN vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1.0 GHz
10
5
0
0.1
1
10
I
C
– Collector Current – mA
20
10
0
NOISE FIGURE AND POWER GAIN AT OPTIMUM NF
vs. COLLECTOR CURRENT
V
= 1 V
f = 1.0 GHz
10
5
0
0.1
1
10
I
C
– Collector Current – mA
G
N
G
a
NF
200
150
100
50
0
50
100
150
Free Air
T
A
– Ambient Temperature – C
P
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
f – Frequency – GHz
|
2
|
2
M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4187R6A | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4187R6B | TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | SOT-323 |
| 2SC4187R6C | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4188 | Ultrahigh-Definition Display Video Output Applications |
| 2SC4196 | Silicon NPN Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4187R6A | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | SOT-323 |
| 2SC4187R6B | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | SOT-323 |
| 2SC4187R6C | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | SOT-323 |
| 2SC4188 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 200V .1A 10W BCE |
| 2SC4188C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB |
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