- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33396 > 2SC4176 Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC4176 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 782K |
| 代理商： | 2SC4176 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON TRANSISTOR
2SC4176
HIGH SPEED SWITCHING
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D19099EJ2V0DS00 (2nd edition)
(Previous No. TC-2104)
Date Published January 2008 NS
Printed in Japan
1987, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
High-speed switching
Low collector saturation voltage
High gain bandwidth product
Low collector capacitance
Can be used complementary to the 2SA1610.
Small Package: 3-pin Super Small Package (SC-70)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCES
40
V
VCEO
15
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
ELECTRICAL CHRACTERISTICS (Ta = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 A
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 3.0 V, IC = 0 A
0.1
μA
DC Current Gain
hFE
VCE = 1.0 V, IC = 10 mA
40
90
200
Collector Saturation Voltage
VCE(sat)
IC = 10 mA, IB = 1.0 mA
0.15
0.25
V
Base Saturation Voltage
VBE(sat)
IC = 10 mA, IB = 1.0 mA
0.80
0.85
V
Gain Bandwidth Product
fT
VCE = 10 V, IE =
10 mA
500
750
MHz
Collector Capacitance
Cob
VCB = 5.0 V, IE = 0 A, f = 1.0 MHz
1.8
4.0
pF
Turn-on Time
ton
8.0
12
ns
Storage Time
tstg
6.0
13
ns
Turn-off Time
toff
(When tstg, IB1 =
IB2 = 10 mA)
See Test Circuits
12
18
ns
hFE Classification
Marking
B33
B34
B35
hFE
40 to 80
60 to 120
100 to 200
PACKAGE DRAWING (Unit: mm)
2.1±0.1
1.25±0.1
0.65
0.3
0.65
2.0±0.2
0.9±0.1
0
to
0.1
0.15
+0.1 –0.05
2
1
3
+0.1
–0
0.3
+0.1 –0
0.3
Marking
1. Emitter
2. Base
3. Collector
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4176B34 | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4176-A | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4176B33 | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4176B35 | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4179-T2FA3 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4176B33 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC4176B34 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC4176B35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC4176-T1-A(B35) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4176-T1-A-B33 | 制造商:Renesas Electronics 功能描述:NPN |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。