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參數(shù)資料
| 型號： | 2SC4111 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3L, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC4111 |
2
Power Transistors
2SC4111
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
0
160
40
120
80
140
20
100
60
0
200
150
50
100
(1)
(3)
(2)
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
0.1A
0.05A
0.2A
0.5A
0.7A
1A
I
B
=2A
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=2.8
–25C
25C
T
C
=100C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
I
C
/I
B
=2.8
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
1000
100
10
3
30
300
V
CE
=5V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
V
=10V
f=0.5MHz
T
C
=25C
T
T
1
3
10
30
100
10
10000
1000
100
30
300
3000
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
DC
10ms
t=1ms
Collector to emitter voltage V
CE
(V)
C
C
0
1600
400
1200
800
1400
200
1000
600
0
40
30
10
25
35
20
5
15
I
CP
<1mA
f=15.75kHz, T
=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector to emitter voltage V
CE
(V)
C
C
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