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參數(shù)資料
| 型號： | 2SC4061KT146/P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 2SC4061KT146/P |
2SC4061K / 2SC3415S / 2SC4015
Transistors
Rev.A
2/3
Electrical characteristics curves
100
60
40
20
0
02
4
6
8
10
80
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.1 Ground emitter output
characteristics (
Ι )
Ta
=25°C
IB
=0.2mA
0.4mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.6mA
0.8mA
1.0mA
100
60
40
20
0
04
8
12
16
20
80
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.2 Ground emitter output
characteristics (
ΙΙ )
Ta
=25°C
IB
=0.2mA
0.4mA
0.6mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.8mA
1.0mA
200
400
600
800
1000
1200
1400
1600
200
100
20
10
2
1
0.5
5
50
BASE TO EMITTER VOLTAGE : VBE (mV)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.3 Ground emitter propagation
characteristics
VCE
=10V
Ta=100
°C
25
°C
25
°C
5
10
20
50
100
500
200
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.4 DC current gain
vs. collector current (
Ι )
Ta
=25°C
VCE
=10V
5V
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.5 DC current gain
vs. collector current (
ΙΙ )
5
2
10
20
50
100
500
200
0.2
0.5 1
2
5 10
20
50 100
VCE
=10V
Ta
=100°C
25
°C
25°C
0.02
0.05
0.1
0.2
0.5
1
2
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta
=25°C
IC/IB
=10
5
10
2
1
0.5
5
20
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
Fig.9 Collector output capacitance
vs. collector-base voltage
Ta
=25°C
f
=1MHz
IE
=0A
0.02
0.05
0.1
0.2
0.5
1
2
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
IC/IB
=10
Ta
=25°C
Ta
=100°C
25
°C
25
°C
100
°C
25°C
VBE(sat)
VCE(sat)
100
20
10
5
50
200
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
TRANSITION
FREQUWNCY
:
f
T
(MHZ)
Fig.8 Gain bandwidth product
vs. emitter current
Ta
=25°C
VCE
=30
10V
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