參數(shù)資料
型號: 2SC4050
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/6頁
文件大?。?/td> 30K
代理商: 2SC4050
2SC4050
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
120
V
Collector to emitter voltage
120
V
Emitter to base voltage
5
V
Collector current
100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
0.1
μ
A
μ
A
V
CB
= 70 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA*
2
I
C
= 10 mA, I
B
= 1 mA*
2
Emitter cutoff current
0.1
DC current transfer ratio
250
800
Collector to emitter saturation
voltage
0.1
V
Base to emitter saturation
voltage
Notes: 1. The 2SC4050 is grouped by h
FE
as follows.
2. Pluse test
Grade
D
V
BE(sat)
1.1
V
I
C
= 10 mA, I
B
= 1 mA*
2
E
Mark
KID
KIE
h
FE
250 to 500
400 to 800
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相關代理商/技術參數(shù)
參數(shù)描述
2SC4050_11 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SC4050D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-346
2SC4050E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-346
2SC4050KIDTR 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SC4050KIETR 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial