參數(shù)資料
型號: 2SC3906K
廠商: Rohm CO.,LTD.
英文描述: High-voltage Amplifier Transistor(120V, 50mA)
中文描述: 高電壓放大器晶體管(120伏特,50mA的)
文件頁數(shù): 1/1頁
文件大小: 57K
代理商: 2SC3906K
2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
!
Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
2SC4102 / 2SC3906K
2SC2389S
P
C
Tj
Tstg
Limits
120
120
5
50
0.2
0.3
150
55~
+
150
Unit
V
V
V
mA
W
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
2SC2389S
SPT
RS
TP
5000
2SC3906K
SMT3
RS
T
T146
3000
2SC4102
UMT3
RS
T
T106
3000
Code
Basic ordering unit (pieces)
Denotes h
FE
!
External dimensions
(Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC3906K
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4102
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0
0
0
0.1Min.
(
0
0
0
0
(
2
1
(
0
Each lead has same dimensions
0
0
0
0.3Min.
1
(
(
2.8
1.6
0
(
2
1
0
ROHM : SPT
EIAJ : SC-72
2SC2389S
(1) Emitter
(2) Collector
(3) Base
Each lead has same dimensions
0.45
2.5
(1) (2) (3)
(
5
3
3
0.45
0.5
4
2
Taping specifications
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
120
120
5
180
Typ.
140
2.5
Max.
0.5
0.5
0.5
560
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
6V, I
C
=
2mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
相關(guān)PDF資料
PDF描述
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