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參數(shù)資料
| 型號(hào)： | 2SC3834G-TA3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | HALOGEN FREE AND LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 193K |
| 代理商： | 2SC3834G-TA3-T |
2SC3834
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-026.C
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-emitter voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
8
V
Collector Current (Pulse)
IC
7
A
Base Current
IB
3
A
Collector Dissipation (TC=25°C)
PC
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC= 50mA
120
V
Collector Cutoff Current
ICBO
VCB=200V, IE=0A
100
μA
Emitter Cutoff Current
IEBO
VEB=8V, IC=0A
100
μA
DC Current Gain (Note)
hFE
VCE=4V, IC=3A
70
220
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=0.3mA
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=3A, IB=0.3mA
1.2
V
Current Gain Bandwidth Product
fT
IE=-0.5mA, VCE=12V, f=100MHz
30
MHz
Output Capacitance
Cob
VCB=10 V, IE=0A, f=1MHz
110
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SC3835 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 120V 7A TO3P |
| 2SC3837KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC3837KT146N | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3837KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2 |
| 2SC3837KT146P | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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