- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370070 > 2SC3603 (NEC Corp.) NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC3603 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管低噪聲放大用于微波 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 2SC3603 |
1996
DATA SHEET
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3603
The 2SC3603 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
Low noise
High power gain : G
A
= 10 dB TYP. @ f = 2.0 GHz
: NF = 2.1 dB TYP. @ f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T (T
C
= 25
°
C)
580
mW
Junction Temperature
T
j
200
°
C
Storage Temperature
T
stg
-
65 to +150
°
C
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 10 V, I
E
= 0
1.0
μ
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
1.0
μ
A
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 20 mA Pulse
50
120
300
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
7
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.5
1.0
pF
Noise Figure
NF
Note
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
2.1
3.4
dB
Insertion Gain
|S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 2 GHz
7.0
9.0
dB
Maximum Available Gain
MAG
V
CE
= 10 V, I
C
= 20 mA, f = 2 GHz
10.0
12.0
dB
Power Gain
G
A
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
10
dB
3.8 MIN.
E
C
B
E
45
°
0.5
±
0.05
0
±
0
+
-
2.55
±
0.2
2.1
φ
3.8 MIN.
3
3
1
0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3604 | NPN Silicon Epitaxial Dual Transistor For Microwave Low Noise Amplifier(應(yīng)用于微波低噪聲放大器的NPN硅外延晶體管) |
| 2SC3615 | MINIATURE PC BOARD RELAY |
| 2SC3615K | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 300MA I(C) | TO-92 |
| 2SC3615L | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3615M | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 300MA I(C) | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3605 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. TO-9220V .08A .6W BEC |
| 2SC3608 | 制造商:TOS 功能描述:2SC3608 TOSHIBA'95 |
| 2SC3611 | 功能描述:TRANS NPN HF 50VCEO .15A TO-126 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SC3615 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9250V .3A .75W ECB |
| 2SC3615-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。