參數(shù)資料
型號(hào): 2SC3569
廠商: NEC Corp.
英文描述: NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
中文描述: NPN硅三重?cái)U(kuò)散晶體管高壓高速開關(guān)
文件頁數(shù): 1/6頁
文件大?。?/td> 128K
代理商: 2SC3569
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confirm that this is the latest version.
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2002
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC3569
NPN
SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-
VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
The 2SC3569 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
V
CE(sat)
= 1.0 V MAX. (@ 0.7 A)
Fast switching speed:
t
f
1.0
μ
s MAX. (@ 0.7 A)
Wide base reverse-bias SOA:
V
CEX(SUS)
= 450 V MIN. (@ 0.5 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
2.0
A
Collector current (pulse)
I
C(pulse)
*
4.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
(Tc = 25
°
C)
15
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
300
μ
s, duty cycle
10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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