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參數(shù)資料
| 型號(hào)： | 2SC3553 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(小信號(hào)晶體管) |
| 中文描述： | npn型硅外延（小信號(hào)晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 2SC3553 |
2SC3553
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
35
V
Collector to emitter voltage
35
V
Emitter to base voltage
4
V
Collector current
500
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
h
FE2
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 500 mA*
2
I
C
= 150 mA, I
B
= 15 mA*
2
DC current transfer ratio
60
—
320
10
—
—
Collector to emitter saturation
voltage
—
0.2
0.6
V
Base to emitter voltage
Notes: 1. The 2SC3553 is grouped by h
FE1
as follows.
2. Pulse test
B
C
V
BE
—
0.64
—
V
V
CE
= 3 V, I
C
= 10 mA
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SC1213.
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