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| 型號： | 2SC3468L-E |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SC3468L-E |
UTC 2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R208-037,A
HIGH VOLTAGE TRANSISTOR FOR
VIDEO OUTPUT OF HIGH-DEFINITION
CRT DISPLAYS
FEATURES
* High breakdown voltage: VCBO, VCEO≧300V
* Small reverse transfer capacitance and excellent high
frequency characteristicF
SOT-89
1
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SC3468L
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Collector Dissipation
PC
1.0
W
Junction Temperature
TJ
0 ~ +125
℃
Storage Temperature
TSTG
-65 ~ +125
℃
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
0.1
A
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 10V, IC = 10mA
40
320
Gain-Bandwidth Product
fT
VCE = 30V, IC = 10mA
150
MHz
Collector-to-Emitter Saturation Voltage
VCE (sat)
IC = 20mA, IB = 2mA
0.6
V
Base-to-Emitter Saturation Voltage
VBE (sat)
IC = 20mA, IB = 2mA
1.0
V
Collector-to-Base Breakdown Voltage
V(BR) CBO
IC = 10A, IE = 0
300
V
Collector-to-Emitter Breakdown Voltage
V(BR) CEO
IC = 1mA, RBE = ∞
300
V
Emitter-to-Base Breakdown Voltage
V(BR) EBO
IE = 10A, IC = 0
5
V
Output Capacitance
Cob
VCB = 30V, f = 1MHz
2.6
pF
Reverse Transfer Capacitance
Cre
VCB = 30V, f = 1MHz
1.8
pF
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