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參數(shù)資料
| 型號(hào)： | 2SC3356-T1R25-A |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | 2SC3356-T1R25-A |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
Document No. PU10209EJ01V0DS (1st edition)
(Previous No. P10356EJ5V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1985, 2003
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3356
50 pcs (Non reel)
8 mm wide embossed taping
2SC3356-T1
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3356-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R23 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1R24 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3356-T2B | 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356W | 制造商:BILIN 制造商全稱(chēng):Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC3356-X-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3357 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD |
| 2SC3357(NE85634) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Discrete |
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