參數(shù)資料
型號: 2SC3338
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大小: 24K
代理商: 2SC3338
2SC3338
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
V
Collector to emitter voltage
12
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
400
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
12
V
I
C
= 1 mA, R
BE
=
Emitter cutoff current
I
EBO
I
CBO
h
FE
Cob
10
μ
A
μ
A
V
EB
= 3 V, I
C
= 0
V
CB
= 15 V, I
C
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
= 5 V, I
C
= 20 mA,
f = 900 MHz
Collector cutoff current
0.5
DC current transfer ratio
30
90
200
Collector output capacitance
1.0
1.5
pF
Gain bandwidth product
f
T
PG
3.5
4.5
GHz
Power gain
8.2
dB
Noise figure
NF
2.0
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is “AR”.
See characteristic curves of 2SC3127.
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2SC3339 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236
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2SC3341 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
2SC3344 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 8A I(C) | TO-220VAR
2SC3345 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL TYPE