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參數(shù)資料
| 型號： | 2SC3336 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SC3336 |
2SC3336
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
B
P
C
*
Tj
500
V
Collector to emitter voltage
400
V
Emitter to base voltage
10
V
Collector current
15
A
Collector peak current
25
A
Base current
7.5
A
Collector power dissipation
1
100
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
V
CEO(sus)
V
CEX(sus)
400
—
—
V
I
C
= 0.2 A, R
BE
= _, L = 100 mH
I
C
= 15 A, I
= 3.0 A, I
= –1 A
V
= –5.0 V, L = 180 μH,
Clamped
voltage
400
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
10
—
—
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
—
—
50
μA
V
CB
= 400 V, I
E
= 0
V
CE
= 350 V, R
BE
= _
V
CE
= 5.0 V, I
C
= 7.5 A*
V
CE
= 5.0 V, I
C
= 15 A*
I
C
= 7.5 A, I
B
= 1.5 A*
—
—
50
μA
DC current transfer ratio
12
—
—
1
5
—
—
1
Collector to emitter saturation
voltage
—
—
1.0
V
1
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
Turn on time
t
on
t
stg
t
f
—
—
0.5
μs
I
C
= 15 A, I
B1
= –I
B2
= 3.0 A
V
CC
= 150 V
Storage time
—
—
1.5
μs
Fall time
Note:
—
0.3
0.5
μs
1. Pulse test
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