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參數(shù)資料
| 型號(hào)： | 2SC3313B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | NS-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 201K |
| 代理商： | 2SC3313B |
1
Transistors
Publication date: March 2003
SJC00129BED
2SC3313
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
Optimum for high-density mounting
Allowing supply with the radial taping
Optimum for RF amplification of FM/AM radios
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Forward current transfer ratio *
hFE
VCB
= 10 V, I
E
= 1 mA
70
250
Transition frequency
fT
VCB = 10 V, IE = 1 mA, f = 200 MHz
150
MHz
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
1.6
pF
(Common emitter)
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
60
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
hFE
70 to 160
110 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
23
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
15.6
±
0.5
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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