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參數資料
| 型號： | 2SC3281-R |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 封裝： | 2-21F1A, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 340K |
| 代理商： | 2SC3281-R |
TOSHIBA
TOSHIBA CORPORATION
1/2
Discrete Semiconductors
2SC3281
Transistor
Silicon NPN Triple Diffused Type
Power Amplier Applications
Features
Complementary to 2SA1302
Recommended for 100W High Fidelity Audio Frequency
Amplier Output Stage
Absolute Maximum Ratings (Ta = 25
°C)
Electrical Characteristics (Ta = 25
°C)
Note: hFE (1) Classication R : 0: 55 ~ 110, 0 : 80 ~ 160
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
200
V
Emitter-Base Voltage
VEBO
5V
Collector Current
IC
15
A
Base Current
IB
1.5
A
Collector PowerDissipation
(Tc = 25
°C)
PC
150
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
-55 ~ 150
°C
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 200V, IE = 0
–
5.0
A
Emitter Cut-off Current
IEBO
VEB = 5V, IC = 0
–
5.0
A
Collector-Emitter Breakdown Voltage
V(BR) CEO
IC = 50mA, IB = 0
200
–
V
DC Current Gain
hFE(1) (Νοte) VCE = 5V, IC = 1mA
55
–
160
hFE(2)
VCE = 5V, IC = 8A
35
60
–
Saturation Voltage Collector-Emitter
VCE(sat)
IC = 10A, IB = 1A
–
0.40
3.0
V
Base-Emitter Voltage
VBE
VCE = 5V, IC = 8A
–
1.0
1.5
V
Transition Frequency
fT
VCE = 5V, IC = 1A
–
30
–
MHz
Collector Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
270
–
pF
Unit in mm
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