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參數(shù)資料
| 型號(hào)： | 2SC3268 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-5K1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 180K |
| 代理商： | 2SC3268 |
2SC3268
2003-03-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3268
VHF~UHF Band Low Noise Amplifier Applications
NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz)
NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
17
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
30
mA
Collector current
IC
70
mA
Collector power dissipation
PC
300
mW
Collector power dissipation
PC
(Note 1)
800
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~150
°C
Note 1: When mounted ceramic substrate of 250 mm
2 0.8 mmt
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 10 V, IC = 20 mA
5
GHz
S21e
2 (1)
VCE = 10 V, IC = 20 mA, f = 500 MHz
15.0
Insertion gain
S21e
2 (2)
VCE = 10 V, IC = 20 mA, f = 1 GHz
9.5
dB
NF (1)
VCE = 10 V, IC = 5 mA, f = 500 MHz
1.7
Noise figure
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
2.0
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
mA
DC current gain
hFE
VCE = 10 V, IC = 20 mA
25
Collector output capacitance
Cob
1.05
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.7
pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking: ME
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.052 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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