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參數(shù)資料
| 型號(hào)： | 2SC3266-Y |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 368K |
| 代理商： | 2SC3266-Y |
2SC3266
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3266
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A)
Complementary to 2SA1296
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.1 A
120
700
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
75
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3266 | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3266-Y | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3266-GR | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3266GR | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3266Y | SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3266-Y(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3267 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWICHING APPLICATIONS) |
| 2SC3267_03 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications Power Switching Applications |
| 2SC3267BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | SPAK |
| 2SC3267GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | SPAK |
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