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參數(shù)資料
| 型號： | 2SC3265-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 2SC3265-Y |
2SC3265
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
High DC current gain: hFE (1) = 100~320
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
Complementary to 2SA1298
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
25
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
5
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 800 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.4
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3265-O | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC3265-Y | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC3265Y | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3265O | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3265Y | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3265-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR - Tape and Reel 制造商:Toshiba 功能描述:NPN |
| 2SC3265-Y(TE85R,F) | 制造商:Toshiba 功能描述:SMALL-SIGNAL TRANSISTOR |
| 2SC3265-Y,LF | 功能描述:TRANS NPN 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:800mA 電壓 - 集射極擊穿（最大值）:25V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:400mV @ 20mA，500mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 頻率 - 躍遷:120MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:TO-236 標(biāo)準(zhǔn)包裝:1 |
| 2SC3265YTE85L | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Frequency Power Amplifier Applications Power Switching Applications |
| 2SC3266 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-92 30V .2A .75W ECB |
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