- 您現(xiàn)在的位置：買賣IC網 > PDF目錄30532 > 2SC3130P (PANASONIC CORP) Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 PDF資料下載
參數(shù)資料
| 型號： | 2SC3130P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2SC3130P |
Transistors
1
Publication date: February 2003
SJC00125BED
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 010
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 03
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 01
A
Forward current transfer ratio *
1
hFE
VCE = 4 V, IC = 5 mA
75
220
hFE ratio *
2
h
FE
hFE2: VCE
= 4 V, I
C
= 100 A
0.75
1.60
hFE1: VCE = 4 V, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
IC = 20 mA, IB = 4 mA
0.5
V
Transition frequency
fT
VCB
= 4 V, I
E
= 5 mA, f = 200 MHz
1.4
1.9
2.5
GHz
Collector output capacitance
Cob
VCB = 4 V, IE = 0, f = 1 MHz
1.4
pF
(Common base, input open circuited)
Reverse transfer capacitance
Crb
VCB = 4 V, IE = 0, f = 1 MHz
0.45
pF
(Common emitter)
Collector-base parameter
rbb' CC
VCB = 4 V, IE = 5 mA, f = 31.9 MHz
11
ps
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
P
Q
hFE
75 to 130
110 to 220
Marking Symbol: 1S
*2:
h
FE = hFE2 / hFE1
This product complies with the RoHS Directive (EU 2002/95/EC).
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3133 | 6 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2SC3138Y | SMALL SIGNAL TRANSISTOR |
| 2SC3142-2 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3143K3 | 80 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1257 | 80 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3130Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 2SC3130R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 2SC3133 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| 2SC3134 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5960V .15A .2W ECB SUFACE MT |
| 2SC3134-4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
發(fā)布緊急采購，3分鐘左右您將得到回復。