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參數(shù)資料
| 型號(hào)： | 2SC3113B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | 2SC3113B |
2SC3113
2003-03-25
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
For Audio Amplifier and Switching Applications
High DC current gain: hFE = 600~3600
High breakdown voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
A
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
600
3600
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.12
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
250
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 k
0.5
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 k
0.3
dB
Note: hFE classification A: 600~1800, B: 1200~3600
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
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| 2SC3113-B(F) | 制造商:Toshiba 功能描述:NPN Bulk |
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