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參數(shù)資料
| 型號： | 2SC2951 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
| 中文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2SC2951 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 1.0 mA
BV
CBO
I
C
= 100
μ
A
BV
EBO
I
E
= 100
μ
A
I
CBO
V
CB
= 15 V
I
EBO
V
EB
= 1.0 V
h
FE
V
CE
= 8.0 V I
C
= 200 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
UNITS
V
25
V
1.5
V
1.0
μ
A
μA
4.0
20
200
---
C
OB
V
CB
= 10 V f = 1.0 MHz
2.9
4.0
pF
S21
2
P
OSC
V
CC
= 8.0 V I
C
= 200 mA f = 1.0 GHz
V
CE
= 12 V I
C
= 200 mA f = 7.5 GHz
3.5
dB
630
mW
NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC2951
DESCRIPTION:
The
ASI
2SC2951
is a High
Frequency Transistor Designed for
General Purpose Oscillator
Applications up to 10 GHz.
FEATURES:
P
OSC
= 630 mW Typical at 7.5 GHz
Omnigold
Metallization System
MAXIMUM RATINGS
I
C
440 mA
V
CE
16 V
V
CB
25 V
P
DISS
9.7 W @ T
C
= 25 °C
T
J
-65 to +200 °C
T
STG
-65 to +200 °C
θ
JC
18 °C/W
PACKAGE STYLE .200 2L FLG
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2958-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SC2959-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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