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參數(shù)資料
| 型號(hào)： | 2SC2879 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 62K |
| 代理商： | 2SC2879 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 100 mA
45
V
BVCEO
IC = 100 mA
18
V
BVEBO
IE = 10 mA
4.0
V
hFE
VCE = 5.0 V
IC = 10 A
10
150
---
COB
VCB = 12.5 V
f = 1.0 MHz
700
pF
GP
ηC
IMD3
VCE = 12.5 V
Iidle = 100 mA
f = 28 MHz
POUT = 100 W
13.0
35
15.2
-24
dB
%
dBc
ZIN
VCC = 12.5 V
POUT = 100 W
f = 28 MHz
---
1.45 – j0.95
---
ZOUT
VCC = 12.5 V
POUT = 100 W
f = 28 MHz
---
1.45 – J1.0
---
NPN SILICON RF POWER TRANSISTOR
2SC2879
DESCRIPTION:
The
ASI 2SC2879 is a 12.5 V
transistor designed primarily for SSB
linear power amplifier applications up
tp 28 MHz.
FEATURES:
PG = 13 Typ. min. at 100 W/28 MHz
IMD3 = -24 dBc max. at 100 W(PEP)
Omnigold Metalization System
MAXIMUM RATINGS
IC
25 A
VCBO
45 V
VCEO
18 V
VEBO
4.0 V
PDISS
250 W @ TC = 25 °C
TJ
-65 °C to +175 °C
TSTG
-65 °C to +175 °C
θJC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
C
E
B
E
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