參數(shù)資料
型號: 2SC2854
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大?。?/td> 24K
代理商: 2SC2854
2SC2853, 2SC2854
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SC2853
2SC2854
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
90
120
V
Collector to emitter voltage
90
120
V
Emitter to base voltage
5
5
V
Collector current
100
100
mA
Emitter current
–100
–100
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SC2853
2SC2854
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
90
120
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
90
120
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
0.1
0.1
μ
A
μ
A
V
CB
= 70 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA*
2
I
C
= 10 mA, I
B
= 1 mA*
2
Emitter cutoff current
0.1
0.1
DC current transfer ratio
250
800
250
800
Collector to emitter
saturation voltage
0.05 0.10
0.05
0.10 V
Base to emitter saturation
voltage
V
BE(sat)
0.7
1.0
0.7
1.0
V
Gain bandwidth product
f
T
310
310
MHz V
CE
= 6 V, I
C
= 10 mA
pF
V
= 10 V, I
E
= 0,
f = 1 MHz
Collector output capacitance Cob
3
3
Notes: 1. The 2SC2853 and 2SC2854 are grouped by h
FE
as follows.
2. Pulse test
D
E
250 to 500
400 to 800
See characteristic curves of 2SC2855 and 2SC2856.
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