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參數(shù)資料
| 型號(hào)： | 2SC2790 |
| 英文描述： | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 2A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管|叩| 800V的五（巴西）總裁|甲一（c）|至3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SC2790 |
3
Transistor
2SC2778
C
ob
— V
CB
b
ie
— g
ie
b
re
— g
re
b
fe
— g
fe
b
oe
— g
oe
1
3
10
30
100
0
3.2
2.4
0.8
2.0
2.8
1.6
0.4
1.2
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0
20
16
4
12
8
0
12
10
8
6
4
2
y
ie
=g
+jb
ie
V
CE
=10V
f=0.45MHz
–1mA
58
25
10.7
100
I
E
=– 0.1mA
Input conductance g
ie
(mS)
I
i
– 0.5
0
– 0.1
– 0.4
– 0.2
– 0.3
–3.0
0
– 0.5
–1.0
–1.5
–2.0
–2.5
y
re
=g
+jb
re
V
CE
=10V
f=0.4510.7
I
E
=–7mA
–2mA
–4mA
–1mA
– 0.4mA
25
58
100
Reverse transfer conductance g
re
(mS)
R
r
0
100
80
20
60
40
–120
0
–20
–40
–60
–80
–100
y
fe
=g
+jb
fe
V
CE
=10V
f=0.45MHz
10.7
10.7
10.7
–1mA
0.45
– 0.4mA
–
–2mA
–4mA
I
E
=–7mA
100
100
100
100
58
25
25
25
58
58
58
Forward transfer conductance g
fe
(mS)
F
f
0
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
+jb
oe
V
CE
=10V
f=0.45MHz
I
E
=– 0.1mA
–7mA
–4mA
–2mA
–1mA
– 0.4mA
58
10.7
25
100
Output conductance g
oe
(mS)
O
o
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