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參數(shù)資料
| 型號(hào)： | 2SC2782 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SC2782 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
16
V
BVCBO
IC = 20 mA
36
V
BVEBO
IE = 1.0 mA
4.0
V
hFE
VCE = 5.0 V
IC = 10 A
10
100
---
COB
VCB = 12.5 V
f = 1.0 MHz
390
pF
PG
ηC
VCC = 12.5 V
POUT = 80 W
f = 175 MHz
PIN = 18 W
6.4
60
6.8
70
dB
%
ZIN
VCC = 12.5 V
POUT = 80 W
f = 175 MHz
---
1.0 + j1.5
---
ZCL
VCC = 12.5 V
POUT = 80 W
f = 175 MHz
---
1.2 + j1.8
---
NPN SILICON RF POWER TRANSISTOR
2SC2782
DESCRIPTION:
The
ASI 2SC2782 is a12.5 V epitaxial
silicon NPN transistor. Designed primarily
for VHF power amplifer application up
to175 MHz band.
FEATURES:
175 MHz 12.5 V
P
G = 6.4 dB at 80 W/175 MHz
Omnigold Metalization System
Common Emitter configuration
MAXIMUM RATINGS
IC
20 A
VCBO
36 V
VCEO
16 V
VEBO
4.0 V
PDISS
220 W @ TC = 25 °C
TJ
-65 °C to +175 ° C
TSTG
-65 °C to +175 °C
θ
JC
0.68 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collecttor 2 = Base 3&4 = Emitter
MIN IMU M
inches / m m
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MA XIM U M
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / m m
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FU LL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
1
2
3
4
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參數(shù)描述 |
|---|---|
| 2SC2782A | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 16V 20A 6-Pin 2-13C1A |
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| 2SC2784-F(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2784FTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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