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參數(shù)資料
| 型號(hào)： | 2SC2654-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 96K |
| 代理商： | 2SC2654-AZ |
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1998
Document No. D16134EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2654
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
FEATURES
Large current capacitance in small dimension: IC(DC) = 7 A
Low collector saturation voltage:
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
Ideal for use in a lamp driver
Complementary transistor: 2SA1129
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)*15
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (Tc = 25
°C)
40
W
Total power dissipation
PT (Ta = 25
°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1
VCE = 1.0 V, IC = 3 A*
40
320
DC current gain
hFE2
VCE = 1.0 V, IC = 5 A*
20
Collector saturation voltage
VCE(sat)1
IC = 3.0 A, IB = 0.1 A*
0.3
V
Base saturation voltage
VBE(sat)1
IC = 3.0 A, IB = 0.1 A*
1.5
V
Collector saturation voltage
VCE(sat)2
IC = 5.0 A, IB = 0.5 A*
0.6
V
Base saturation voltage
VBE(sat)2
IC = 5.0 A, IB = 0.5 A*
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 5.0 A, IB1 =
IB2 = 0.5 A
RL = 4.0
, VCC 20 V
PW
50
s, duty cycle ≤ 2 %
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE1 classification M: 40 to 80, L: 60 to 120, K: 100 to 200, J: 160 to 320
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| 2SC2654 | 7 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2654-M | 7 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2654-AZ | 7 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2655G-Y-AE3-R | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2654-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2654-J(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2654-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2655 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2655-O(ND1,AF) | 功能描述:TRANS NPN 2A 50V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 50mA，1A 電流 - 集電極截止（最大值）:1μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:900mW 頻率 - 躍遷:100MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長(zhǎng)體 供應(yīng)商器件封裝:TO-92MOD 標(biāo)準(zhǔn)包裝:1 |
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