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參數(shù)資料
| 型號： | 2SC2619 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC2619 |
2SC2619
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
30
V
Emitter to base voltage
5
V
Collector current
100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
0.5
μ
A
μ
A
V
CB
= 20 V, I
C
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
—
—
0.5
DC current transfer ratio
35
—
200
Collector to emitter saturation
voltage
—
—
1.1
V
Base to emitter voltage
V
BE
f
T
Cob
—
—
0.75
V
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
= 6 V, I
C
= 2 mA,
f = 1 MHz, R
g
= 500
Gain bandwidth product
—
230
—
MHz
Collector output capacitance
—
—
3.5
pF
Noise figure
NF
—
5.0
—
dB
Note:
Grade
1. The 2SC2619 is grouped by h
FE
as follows.
A
B
C
Mark
FA
FB
FC
h
FE
35 to 75
60 to 120
100 to 200
See characteristic curves of 2SC460.
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PDF描述 |
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| 2SC2688K | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC2688L | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2620Q | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2621 | 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-126 |
| 2SC2625 | 制造商:Fuji Electric 功能描述:Bipolar Junction Transistor, NPN Type, TO-247VAR |
| 2SC2631 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC26310RA | 功能描述:TRANS NPN 150VCEO 50MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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