參數(shù)資料
型號: 2SC2610
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused
中文描述: 硅npn型三重擴散
文件頁數(shù): 2/6頁
文件大?。?/td> 29K
代理商: 2SC2610
2SC2610
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
300
V
Collector to emitter voltage
300
V
Emitter to base voltage
5
V
Collector current
100
mA
Collector power dissipation
800
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
1.0
μ
A
V
CE
= 250 V, R
BE
=
V
CE
= 20 V, I
C
= 20 mA
I
C
= 20 mA, I
B
= 2 mA
DC current transfer ratio
30
200
Collector to emitter saturation
voltage
1.5
V
Gain bandwidth product
f
T
Cob
50
80
MHz
V
CE
= 20 V, I
C
= 20 mA
V
CB
= 20 V, I
E
= 0, f = 1 MHz
Collector output capacitance
4.0
pF
相關(guān)PDF資料
PDF描述
2SC2611 Silicon NPN Triple Diffused
2SC2612 Silicon NPN Triple Diffused
2SC2612 Power Bipolar Transistors
2SC2613 Silicon NPN Triple Diffused
2SC2613 Power Bipolar Transistors
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