參數(shù)資料
型號: 2SC2544
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大?。?/td> 24K
代理商: 2SC2544
2SC2396, 2SC2543, 2SC2544
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SC2396
2SC2543
2SC2544
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
60
90
120
V
Collector to emitter voltage
60
90
120
V
Emitter to base voltage
5
5
5
V
Collector current
100
100
100
mA
Emitter current
–100
–100
–100
mA
Collector power dissipation
400
400
400
mW
Junction temperature
150
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SC2396
2SC2543
2SC2544
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
60
90
120
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
60
90
120
V
I
C
= 1 mA,
R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
5
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
0.1
0.1
0.1
μ
A
V
CB
= 50 V, I
E
= 0
Emitter cutoff current
I
EBO
0.1
0.1
0.1
μ
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250
1200
250
1200
250
800
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2
0.2
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Base to emitter voltage
V
BE
0.6
0.6
0.6
V
V
CE
= 12 V,
I
C
= 2 mA
Gain bandwidth product f
T
90
90
90
MHz V
CE
= 12 V,
I
C
= 2 mA
Collector output
capacitance
Cob
3.0
3.0
3.0
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h
FE1
as follows.
D
E
F
2SC2396, 2SC2543
250 to 500
400 to 800
600 to 1200
2SC2544
250 to 500
400 to 800
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
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