參數(shù)資料
型號: 2SC2462
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大小: 24K
代理商: 2SC2462
2SC2462
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
50
V
Collector to emitter voltage
40
V
Emitter to base voltage
5
V
Collector current
100
mA
Emitter current
–100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
40
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
0.5
μ
A
μ
A
V
CB
= 30 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
0.5
DC current transfer ratio
100
500
Collector to emitter saturation
voltage
0.2
V
Base to emitter voltage
Note:
1. The 2SC2462 is grouped by h
FE
as follows.
Grade
B
V
BE
0.75
V
V
CE
= 12 V, I
C
= 2 mA
C
D
Mark
LB
LC
LD
h
FE
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SC458 (LG).
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