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參數(shù)資料
| 型號： | 2SC2324 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC2324 |
2SC2324(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 0.1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
—
—
10
μ
A
V
CB
= 60 V, I
E
= 0
V
CE
= 10 V, I
C
= 500 mA*
1
I
C
= 500 mA, I
B
= 0.5 mA*
1
DC current transfer ratio
2000
—
—
Collector to emitter saturation
voltage
—
—
1.5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
2.0
V
Turn on time
t
on
t
off
—
100
—
ns
V
CC
= 12 V
I
C
= 250 mA, I
B1
= –I
B2
= 5 mA
Turn off time
Note:
—
600
—
ns
1. Pulse test.
0
50
100
150
200
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
2
4
6
8
10
0.03
0.1
0.3
3
1.0
Collector to emitter Voltage V
CE
(V)
C
C
1
2
5
10
20
50 100
Area of Safe Operation
Ta = 25
°
C
1 Shot Pulse
DC (T
C
= 25
°
C)
i
C
(peak)
I
C
(max)
1
μ
s
10
μ
s
1m
PW=1 s
D prtn
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PDF描述 |
|---|---|
| 2SC2324K | Silicon NPN Epitaxial |
| 2SC2328A | AUDIO POWER AMPLIFIER |
| 2SC2333 | PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance) |
| 2SC2333K | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2324(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-126 |
| 2SC2324K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC2327 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30MA I(C) | MICRO-T |
| 2SC2328 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30MA I(C) | MICRO-T |
| 2SC2328A | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO POWER AMPLIFIER |
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