參數(shù)資料
型號(hào)： 2SC2290A
元件分類： 功率晶體管
英文描述： HF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： 2-13B1A, 4 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 176K
代理商： 2SC2290A
2SC2290A
2007-11-01
1
TOSHIBA Transistor Silicon Npn Epitaxial Planar Type
2SC2290A
2~30MHz SSB Linear Power Amplifier Applications
(Low Supply Voltage Use)
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60WPEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
: ηC = 35% (Min.)
Intermodulation Distortion: IMD = 30dB (Max.)
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCES
45
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
A
Collector Power Dissipation
PC
175
W
Junction Temperature
Tj
175
°C
Storage Temperature Range
Tstg
65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Dot
Lot No.
JEDEC
—
EIAJ
—
TOSHIBA
213B1A
Weight: 5.2g
Unit in mm
2SC2290
TOSHIBA
JAPAN
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PDF描述
2SC2295C 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC2290A_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE
2SC2292 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 8A 80W BEC
2SC2293 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 10A 100W BEC
2SC2295 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type
2SC22950BL 功能描述:TRANS NPN 20VCEO 30MA MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
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