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參數(shù)資料
| 型號(hào)： | 2SC1959-Y |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | 2SC1959-Y |
2SC1959
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA
1 watt amplifier applications.
Complementary to 2SA562TM.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
100
mA
Collector power dissipation
PC
500
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
70
400
DC current gain
hFE (2)
(Note)
VCE = 6 V, IC = 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
0.8
1.0
V
Transition frequency
fT
VCE = 6 V, IC = 20 mA
300
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
7
pF
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
hFE (2) classification O: 25 (min), Y: 40 (min)
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC1959-GR | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1966 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2001-M-BP | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2001-L-AP | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2001-K-AP | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1959-Y(F) | 制造商:Toshiba 功能描述:NPN 30V 0.5A 120 to 240 TO92 Bulk |
| 2SC1974 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 |
| 2SC1975 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1976 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5136V .5A 75W ECB |
| 2SC1980 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-92 120V .05A .15W ECB |
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