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參數(shù)資料
| 型號(hào)： | 2SC1881K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重?cái)U(kuò)散 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 35K |
| 代理商： | 2SC1881K |
2SC1881(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C
= 50 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
—
—
0.2
mA
V
CB
= 60 V, I
E
= 0
V
CE
= 30 V, R
BE
=
∞
V
CE
= 1.5 V
—
—
0.4
mA
DC current transfer ratio
1000
—
—
I
C
= 1.5 A*
1
I
C
= 2.5 A*
1
500
—
—
Collector to emitter saturation
voltage
V
CE(sat)
—
—
1.2
V
I
C
= 2.5 A, I
B
= 20 mA*
1
Turn on time
t
on
t
off
—
1
—
μ
s
μ
s
V
CC
= 11 V, I
C
= 2 A,
I
B1
= –I
B2
= 8 mA
Turn off time
Note:
—
5
—
1. Pulse test.
30
20
10
0
50
100
150
C
C
Maximum Collector Dissipation Curve
Case temperature T
C
(
°
C)
10
1
C
C
Ta = 25
°
C
1 shot pulse
5
2
1.0
0.5
0.2
0.1
0.05
p 1m
D pan
(
C
2
°
C
i
C
(peak)
I
C
max
2
5
10
20
50
100
Area of Safe Operation
Collector to emitter voltage V
CE
(V)
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