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參數(shù)資料
| 型號(hào)： | 2SC1623A-L7 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SC1623A-L7 |
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SILICON TRANSISTOR
2SC1623A
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17841EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
c
2005
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
High DC Current Gain:
hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
0.1
μA
VCB = 60 V, IE = 0 A
Emitter Cut-off Current
IEBO
0.1
μA
VEB = 5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE = 6.0 V, IC = 1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 100 mA, IB = 10 mA
Note
Base to Saturation Voltage
VBE(sat)
0.86
1.0
V
IC = 100 mA, IB = 10 mA
Note
Base to Emitter voltage
VBE
0.55
0.62
0.65
V
VCE = 6.0 V, IC = 1.0 mA
Note
Gain Bandwidth Product
fT
250
MHz
VCE = 6.0 V, IE =
10 mA
Output Capacitance
Cob
3.0
pF
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
L4
L5
L6
L7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
1: Emitter
2: Base
3: Collector
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SC1623F | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Epitaxial Planar Transistor |
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| 2SC1623L5 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
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