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參數(shù)資料
| 型號(hào)： | 2SC1623-L6 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI MOLD PACKAGE-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 222K |
| 代理商： | 2SC1623-L6 |
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SILICON TRANSISTOR
2SC1623
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17115EJ5V0DS00 (5th edition)
Date Published November 2005 NS CP(K)
Printed in Japan
c
1984
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
High DC Current Gain:
hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
0.1
μA
VCB = 60 V, IE = 0 A
Emitter Cut-off Current
IEBO
0.1
μA
VEB = 5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE = 6.0 V, IC = 1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 100 mA, IB = 10 mA
Note
Base to Saturation Voltage
VBE(sat)
0.86
1.0
V
IC = 100 mA, IB = 10 mA
Note
Base to Emitter voltage
VBE
0.55
0.62
0.65
V
VCE = 6.0 V, IC = 1.0 mA
Note
Gain Bandwidth Product
fT
250
MHz
VCE = 6.0 V, IE =
10 mA
Output Capacitance
Cob
3.0
pF
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
L4
L5
L6
L7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
2.8 ± 0.2
1.5 TYP.
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
TYP.
0.95
TYP.
2.9
±
0.2
0.4
+0.1
–0.05
2
1
3
0.3
TYP.
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1: Emitter
2: Base
3: Collector
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1623-L6_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC1623-L6-TP | 功能描述:TRANS PREBIAS NPN 50V SOT23 制造商:micro commercial co 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:300mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:- 功率 - 最大值:200mW 頻率 - 躍遷:250MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC1623L7 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SC1623-L7 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC1623L-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD |
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