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參數(shù)資料
| 型號： | 2SC1515(K) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92 (1), 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SC1515(K) |
Data Sheet P15660EJ1V0DS
6
2SC5800
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MSG
|S21e|
2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MAG
MSG
|S21e|
2
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PDF描述 |
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| 2SC1515(K) | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515KTZ | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515K | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515K | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1545M/A | 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1515KTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SC1516 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC1518 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For high-frequency bias oscillation of tape recorders) |
| 2SC15180R | 功能描述:TRANS NPN 20VCEO 1A TO-92L RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC1518Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
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